tsm 2611ed 20v dual n-channel mosfet w/esd protected 1/6 version: a11 sot - 26 product summary v ds (v) r ds(on) (m ) i d (a) 20 20 @ v gs = 4.5v 6 28 @ v gs = 2.5v 5 features advance trench process technology high density cell design for ultra low on resistan ce esd protected hbm 2kv block diagram ` dual n-channel mosfet application portable applications battery management ordering information part no. package packing TSM2611EDcx6 rfg sot-26 3kpcs / 7 reel note: g denotes halogen free product. absolute maximum rating (t a =25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v continuous drain current i d 6 a pulsed drain current i dm 22 a continuous source current (diode conduction) a,b i s 1 a maximum power dissipation t a =25 o c p d 0.83 w t a =100 o c 0.3 operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg -55 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r ? jc 80 o c/w junction to ambient thermal resistance (pcb mounted ) r ? ja 150 o c/w notes: a. pulse width limited by the maximum junction temp erature b. surface mounted on a 1 in 2 pad, t 10 sec. pin definition : 1. source 1 6. gate 1 2. drain 1 5. drain 2 3. source 2 4. gate 2
tsm 2611ed 20v dual n-channel mosfet w/esd protected 2/6 version: a11 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 20 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) 0.5 0.7 1 v gate body leakage v gs = 10v, v ds = 0v i gss -- -- 10 a zero gate voltage drain current v ds = 16v, v gs = 0v i dss -- -- 1.0 a drain-source on-state resistance v gs = 4.5v, i d = 6a r ds(on) -- 16 20 m v gs = 2.5v, i d = 5a -- 20 28 diode forward voltage i s = 1a, v gs = 0v v sd -- 0.7 1.3 v dynamic b total gate charge v ds = 10v, i d = 6a, v gs = 4.5v q g -- 13.5 19 nc gate-source charge q gs -- 0.85 -- gate-drain charge q gd -- 5.4 -- gate resistance v gs =v ds =0v, f = 1.0mhz r g -- 1 -- input capacitance v ds = 10v, v gs = 0v, f = 1.0mhz c iss -- 680 -- pf output capacitance c oss -- 144 -- reverse transfer capacitance c rss -- 137 -- switching b.c turn-on delay time v dd = 10v, i d = 1a, v gen = 10v, r g = 3.3 t d(on) -- 6 12 ns turn-on rise time t r -- 12 24 turn-off delay time t d(off) -- 65 120 turn-off fall time t f -- 35 65 diode characteristic b diode forward voltage i s = 1a, v gs = 0v v sd -- 0.7 1.3 ns reverse recovery time i sd = 6a, di sd /dt=100a/s t r -- 24 -- reversion recovery charge t d(off) -- 16 -- notes: a. pulse test: pw 300s, duty cycle 2% b. for design aid only, not subject to production t esting. c. switching time is essentially independent of ope rating temperature.
tsm 2611ed 20v dual n-channel mosfet w/esd protected 3/6 version: a11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics drain current vs. junction temperature on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm 2611ed 20v dual n-channel mosfet w/esd protected 4/6 version: a11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage capacitance normalized thermal transient impedance, junction-to -ambient
tsm 2611ed 20v dual n-channel mosfet w/esd protected 5/6 version: a11 sot-26 mechanical drawing sot-26 dimension dim millimeters inches min typ max min typ max a 0.95 bsc 0.0374 bsc a1 1.9 bsc 0.0748 bsc b 2.60 2.80 3.00 0.1024 0.1102 0.1181 c 1.40 1.50 1.70 0.0551 0.0591 0.0669 d 2.80 2.90 3.10 0.1101 0.1142 0.1220 e 1.00 1.10 1.20 0.0394 0.0433 0.0472 f 0.00 -- 0.10 0.00 0.0039 g 0.35 0.40 0.50 0.0138 0.0157 0.0197 h 0.10 0.15 0.20 0.0039 0.0059 0.0079 i 0.30 -- 0.60 0.0118 -- 0.0236 j 5o -- 10o 5o -- 10o
tsm 2611ed 20v dual n-channel mosfet w/esd protected 6/6 version: a11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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